2SD1993 查看數據表（PDF） - Panasonic Corporation
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2SD1993 Datasheet PDF : 3 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1993
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
■ Features
/ • Low noise voltage NV
e. • High forward current transfer ratio hFE
e g • Allowing supply with the radial taping
c le sta ■ Absolute Maximum Ratings Ta = 25°C
n d yc Parameter
Symbol Rating
Unit
lifec Collector-base voltage (Emitter open) VCBO
55
V
a e t Collector-emitter voltage (Base open) VCEO
55
V
uc Emitter-base voltage (Collector open) VEBO
7
V
n u rod Collector current
IC
100
mA
P Peak collector current
ICP
200
mA
te tin ur . Collector power dissipation
PC
400
mW
g fo pe tion Junction temperature
Tj
150
°C
in ty a Storage temperature
Tstg −55 to +150 °C
(0.7)
6.9±0.1
(4.0)
0.65 max.
Unit: mm
2.5±0.1
(0.8)
0.45+–00..0150
1.05±0.05
0.45+–00..0150
2.5±0.5
2.5±0.5
123
1: Emitter
2: Collector
3: Base
MT-1-A1 Package
ain oncludems afoinllotenwnaanncceteitnyupeedttyyppeedlatest innform ■ Electrical Characteristics Ta = 25°C ± 3°C
c in d te n d t c/e Parameter
Symbol
Conditions
Min Typ Max Unit
d e in co ue bou t/s Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
55
V
M is tinue lan ma dis tin a .ne Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
55
V
p d on RL ic Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
on ne isc U son Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
µA
isc pla d ing na Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
1
µA
Dce/D llow ://pa Forward current transfer ratio *
hFE VCE = 10 V, IC = 2 mA
210
650
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
1
V
an it fo ttp Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
200
MHz
ten vis h Noise voltage
NV VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
150 mV
ain se Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
M Plea 2. *: Rank classification
Rank
R
S
T
hFE
210 to 340 290 to 460 360 to 650
Publication date: April 2003
SJC00236BED
1
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