2SD402 查看數據表（PDF） - Inchange Semiconductor
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2SD402 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=150V; IE=0
VEB=4V; IC=0
IC=0.4A ; VCE=10V
fT
Transition frequency
IC=0.4A ; VCE=10V
CC
Collector capacitance
IE=0 ; VCB=10V;f=1.0MHz
Product Specification
2SD402
MIN TYP. MAX UNIT
150
V
5
V
2.0
V
50 μA
50 μA
40
7
MHz
45
pF
2
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