2SD669-B-AA3-T 查看數據表（PDF） - Unisonic Technologies
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2SD669-B-AA3-T Datasheet PDF : 5 Pages
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2SD669/A
TYPICAL CHARACTERISTICS
DC Current Transfer Ratio
vs. Collector Current
300
Ta=75℃
250
25
200
150
-20
100
50 VCE=5V
1
1 3 10 30 100 300 1,000 3,000
CollectorCurrent, IC (mA)
Base to Emitter Saturation Voltage
vs. Collector Current
1.2
1.0 IC=10IB
0.8
0.6
TC=-20℃
25
75
0.4
0.2
0
1 3 10 30 100 300 1,000
CollectorCurrent, IC (mA)
Collector Output Capacitance
vs. Collector to Base Voltage
200
f=1MHz
100 IE=0
50
20
10
5
2
12
5 10 20 50 100
Collector to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Collector to Emitter Saturation Voltage
vs. Collector Current
1.2
IC=10 IB
1.0
0.8
0.6
0.4
0.2
0
1
TC=75℃
25
-20
3 10 30 100 300 1,000
CollectorCurrent, IC (mA)
Gain Bandwidth Product
vs. Collector Current
240
VCE=5V
200 Ta=25℃
160
120
80
40
0
10
30
100 300 1,000
Collector Current, IC (mA)
Area of Safe Operation
3
(13.3V, 1.5A)
1.0
40V, 0.5A
0.3
2SD669A
0.1 DC Operation (TC=25℃)
(120V, 0.04A)
0.03
(160V, 0.02A)
2SD669
0.01
1
3
10 30 100 300
Collector to Emitter Voltage, VCE (V)
4 of 5
QW-R204-005,E
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