2SD676 查看數據表（PDF） - Inchange Semiconductor

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产品描述 (功能)

比赛名单

2SD676

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2SD676

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.6A

VBE(on) Base-Emitter On Voltage

IC= 1A; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

hFE-2

DC Current Gain

IC= 6A; VCE= 5V

MIN TYP. MAX UNIT

160

V

5

V

2.5

V

1.5

V

0.1 mA

60

200

20

‹ hFE-1 Classifications

B

C

60-120 100-200

isc Website：www.iscsemi.cn

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