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2SD875 查看數據表(PDF) - Panasonic Corporation

零件编号
产品描述 (功能)
比赛名单
2SD875
Panasonic
Panasonic Corporation Panasonic
2SD875 Datasheet PDF : 3 Pages
1 2 3
Transistors
2SD0875 (2SD875)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0767 (2SB767)
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
Features
Large collector power dissipation PC
High collector-emitter voltage (Base open) VCEO
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
80
V
Collector-emitter voltage (Base open) VCEO
80
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
1
0.4±0.08
1.5±0.1
23
0.5±0.08
0.4±0.04
45˚
3.0±0.15
Marking Symbol: X
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
80
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
80
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
Forward current transfer ratio
hFE1 * VCE = 10 V, IC = 150 mA
130
hFE2 VCE = 50 V, IC = 500 mA
50
Collector-emitter saturation voltage
VCE(sat) IC = 300 mA, IB = 30 mA
Base-emitter saturation voltage
VBE(sat) IC = 300 mA, IB = 30 mA
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
Typ Max
0.1
330
100
0.2 0.4
0.85 1.2
120
11 20
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
130 to 220 185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00198CED
1

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