2SD873 查看數據表（PDF） - Inchange Semiconductor

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比赛名单

2SD873

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD873

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 140V (Min)

·High Power Dissipation

·High Current Capability

APPLICATIONS

·High power amplifier applications.

·High power switching applications.

·DC-DC converter applications.

·Regulator applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MAX

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

140

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

16

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

4

A

150

W

175

℃

-65~175 ℃

isc Website：www.iscsemi.cn

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