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2SD874 查看數據表(PDF) - Willas Electronic Corp.

零件编号
产品描述 (功能)
比赛名单
2SD874
Willas
Willas Electronic Corp. Willas
2SD874 Datasheet PDF : 2 Pages
1 2
WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
2SD874THRU
FM1200-M+
Pb Free Product
Features
TRABNatSchISprToOceRss(dNePsiNgn), excellent power dissipation offers
Package outline
SOT-89
FEALboeTwtUtepRrrroEefviSleerssuerlfeaackeamgoeucnutrerdenatpapnlidcathtieornmianlorredseisr
tance.
to
z opLtoimwizCe boollaercdtsopra-Ecem. itter Saturation Voltage
SOD-123H
zLoLwaprgoeweCr loolsles,chtoigrhPeoffiwcieenr cDy.issipation
High current capability, low forward voltage drop.
zHiMghinsiuPrgoewcaepraTbyiliptye. Package
0.146(3.7)
0.130(3.3)
1. BASE
0.012(0.3) Typ.
zGPuabrd-Frirnegefopr oavcekravoglteagise parvoateiclatiobnle.
Ultra high-speed switching.
SiRlicooHn Seppitraoxdiaul cptlafnoarr pcahicpk, imnegtaclosdiliecosnujfufnixctiGon.
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
LeHaad-lofrgeeenpafrrtesempeerot ednuvcirtofnomr epnatcalksintagndcaordes osfuffix “H”
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
MAHXaIlMogUenMfreReAprToIdNucGt fSor (pTacak=in2g5codeusnulfefixs"sH"otherwise noted)
Mechanical data
0.040(1.0)
SEypmoxbyo:l UL94-V0 rated flame retPaardraanmt eter
Value
Unit
0.024(0.6)
CVaCsBeO: MoldeCdopllleacsttoicr-,BSaOsDe-V1o2l3taHge
,
TVerCmEOinals :PClaotelledctteorrm-Einmailtste, sr oVlodletaragbele per MIL-STD-750
30
V
0.031(0.8) Typ.
25
V
0.031(0.8) Typ.
y VEBO
MEemthiottder2-B02a6se Voltage
r PoIlCarity : IndCicoallteecdtobry Ccautrhreondte band
Mounting Position : Any
PC
Collector Power Dissipation
a Weight : Approximated 0.011 gram
RθJA
Thermal Resistance From Junction To Ambient
5
V
1
DimensioAns in inches and (millimeters)
500
mW
250
/W
in Tj MAXJIMunUcMtionRTAeTmINpeGraStuAreND ELECTRICAL CHARACTER1I5S0TICS
Ratings at T25stg ambieSnttotreamgpeeTraetmurpeeurnalteusrseotherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
-55~+150
For capacitive load, derate current by 20%
lim ELECTRICARLACTIHNGASRACTERISTICSSY(MTBaO=L25FM120u-MnHleFMs1s30o-MtHhFeMr1w40-iMsHeFMs1p5e0-cMHifFieMd16)0-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent PPeaarkaRmeevetersre Voltage
VRRMSymb2o0l
T30est con4d0itions50
60 Min80 Typ 100 Max 150 Unit 200 Volts
MaximuCmoRllMeSctVoorl-tabgaese breakdown voltage
VRMSV(BR)CB1O4 IC=2110µA,IE=208
35
42 30 56
70
105 V 140
Volts
e Maximum DC Blocking Voltage
Collector-emitter breakdown voltage
VDC
20
V(BR)CEO
30
40
IC=2mA,IB=0
50
60
80
25
100
150
200
V
Volts
r Maximum Average Forward Rectified Current
IO
1.0
Amps
Emitter-base breakdown voltage
V(BR)EBO IE=10µA,IC=0
5
V
P Peak FoCrwoalrldeScutrogre Ccuurtr-eontff8.c3umrsresinngtle half sine-wave IFSM ICBO
VCB=20V,IE=0
30
0.1
µA
Amps
superimposed on rated load (JEDEC method)
Typical EThmeritmtealrRceusits-toafnfcecu(Nroreten2t)
RΘJA IEBO
VEB=4V,IC=0
40
0.1
µA
℃/W
Typical Junction Capacitance (Note 1)
CJ hFE(1)
VCE=10V, IC=500mA
120 85
340
PF
OperatinDgCTecmuprererantutregaRiannge
TJ hFE(2)
-V55CEto=5+V12, 5IC=1A
50 -55 to +150
Storage Temperature Range
TSTG
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=50mA
- 65 to +175
0.4
V
Base-emitCteHrAsRaAtCuTrEaRtiIoSnTICvSoltage
MaximuTmraFnorswiatirod nVoflrtaegqeuaetn1c.0yA DC
MaximuCmoAllveecratgoerRoeuvteprsuetCcuarrpeanct aittan@cTeA=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOVLBFEM(s1a2t)0-MH FICM=13500-M0HmFAM,1IB4=0-5M0HmFMA150-MH FM160-MH FM180-MH FM1100-MH1.F2M1150-MHVFM1200-MH UNIT
VF fT
IR Cob
VCE=100V.5,0IC=50mA, f=200.07M0 Hz
VCB=10V, IE=0, f=1MHz
0.5
10
02.8050
0.9 MHz 0.92
20
pF
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- TherCmaLl RAeSsisStaInFceICFrAomTIJOunNctioOn tFo AhmFbEie(1n) t
RANK
RANGE
MARKING
Q
85170
ZQ
R
120240
ZR
S
170340
ZS
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.

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