2SJ186 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

比赛名单

2SJ186

Silicon P Channel MOS FET

Renesas Electronics 

2SJ186

Reverse Drain Current vs.

Source to Drain Voltage

–1.0

Pulse Test

–0.8

–0.6

–0.4

–0.2

VGS = –10 V

0, 5 V

0

0 –0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage VSD (V)

Rev.2.00 Sep 07, 2005 page 5 of 6

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