2SJ280L 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ280L

Silicon P Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ290

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on–resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from

5 V source

• Suitable for Switching regulator, DC – DC

converter

• Avalanche Ratings

TO–220AB

2

1

3

1

2

3

1. Gate

2. Drain

3. Source

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————–

Drain to source voltage

VDSS

–60

V

———————————————————————————————————————————–

Gate to source voltage

VGSS

±20

V

———————————————————————————————————————————–

Drain current

ID

–15

A

———————————————————————————————————————————–

Drain peak current

ID(pulse)*

–60

A

———————————————————————————————————————————–

Body–drain diode reverse drain current

IDR

–15

A

———————————————————————————————————————————–

Avalanche current

IAP***

–15

A

———————————————————————————————————————————–

Avalanche energy

EAR***

19

mJ

———————————————————————————————————————————–

Channel dissipation

Pch**

50

W

———————————————————————————————————————————–

Channel temperature

Tch

150

°C

———————————————————————————————————————————–

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————–

* PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at Tc = 25 °C

*** Value at Tch = 25 °C, Rg ≥ 50 Ω

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