2SJ386 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SJ386 Datasheet PDF : 7 Pages
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2SJ386
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
D
321
1. Source
G
2. Drain
3. Gate
S
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