2SJ598-Z 查看數據表（PDF） - NEC => Renesas Technology
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2SJ598-Z Datasheet PDF : 8 Pages
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2SJ598
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
300
Pulsed
250
200
VGS = –4.0 V
150
–10 V
100
50
0
ID = –6 A
−50
0
50
100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
100
Coss
Crss
10
–0.1
–1
–10
VDS - Drain to Source Voltage - V
–100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100 Pulsed
–10 VGS = –10 V
–1
0V
–0.1
–0.010
–0.5
–1.0
–1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
VDD = –30 V
RG = 0 Ω
VGS = –10 V
100
td(off)
tf
10 td(on)
tr
1
–0.1
–1
–10
–100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60
–12
ID = –12 A
–50
VGS
–10
VDD = –48 V
–30 V
–40
–12 V
–8
–30
–6
–20
–4
–10
0
0
VDS
–2
0
2 4 6 8 10 12 14 16
QG - Gate Charge - nC
Data Sheet D14656EJ4V0DS
5
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