2SJ599-Z 查看數據表（PDF） - NEC => Renesas Technology
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2SJ599-Z Datasheet PDF : 9 Pages
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2SJ599
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = –60 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –10 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –10 V, ID = –10 A
RDS(on)2 VGS = –4.0 V, ID = –10 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
ID = –10 A
Rise Time
tr
VGS = –10 V
Turn-off Delay Time
td(off)
VDD = –30 V
Fall Time
tf
RG = 0 Ω
Total Gate Charge
QG
ID = –20 A
Gate to Source Charge
QGS
VDD= –48 V
Gate to Drain Charge
QGD
VGS = –10 V
Body Diode Forward Voltage
VF(S-D) IF = 20 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20 A, VGS = 0 V
Qrr
di/dt = 100 A /µs
MIN.
–1.5
8
TYP. MAX.
–10
m10
–2.0 –2.5
16
60 75
78 111
1300
240
100
8
9
52
16
26
5
7
1.0
51
102
UNIT
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = −20 → 0 V
−
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS(−)
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
0 10%
VDS(−)
90%
VDS
VDS
Wave Form 0
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14644EJ3V0DS
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