2SJ560 查看數據表（PDF） - SANYO -> Panasonic

零件编号

产品描述 (功能)

生产厂家

2SJ560

P-Channel Silicon MOSFET

SANYO -> Panasonic 

2SJ560

Continued from preceding page.

Parameter

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain "Miller" Charge

Diode Forward Voltage

Symbol

Conditions

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

VDS=–10V, f=1MHz

VDS=–10V, f=1MHz

VDS=–10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

VDS=–10V, VGS=–10V, ID=–1.5A

VDS=–10V, VGS=–10V, ID=–1.5A

VDS=–10V, VGS=–10V, ID=–1.5A

IS=–1.5A, VGS=0

Switching Time Test Circuit

VIN

0V

–4V

VIN

PW=10µs

D.C.≤1%

VDD=–10V

ID=–750mA

RL=13.3Ω

D

VOUT

G

2SJ560

P.G

50Ω

S

Ratings

Unit

min typ max

100

pF

60

pF

25

pF

10

ns

35

ns

25

ns

33

ns

5

nC

1

nC

1

nC

–1.0 –1.5 V

ID - VDS

-1.6

-1.4

-3.0V

-1.2

-8.0V

-1.0 -6.0V

-2.5V

-0.8

-0.6

-2.0V

-0.4

-0.2

VGS=-1.5V

0

0

-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

Drain-to-Source Voltage, VDS – V

| yfs | - I D

10

7

VDS=-10V

5

3

2

Tc=-25°C25°C

1.0

75°C

7

5

3

2

0.1

-0.01 2 3 5 7 -0.1

2 3 5 7 -1.0

23 5

Drain Current, ID – A

-3.2

VDS=-10V

-2.8

ID - VGS

-2.4

-2.0

-1.6

-1.2

-0.8

-0.4

0

0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6

Gate-to-Source Voltage, VGS – V

RDS(on) - VGS

1000

900

ID=-0.75A

800

-0.1A

700

Tc=25°C

600

500

400

300

200

100

0

0

-1 -2 -3 -4 -5 -6 -7 -8 -9 -10

Gate-to-Source Voltage, VGS – V

No.6120–2/4

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