2SJ496 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ496

Silicon P-Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ496

Silicon P-Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A)

• 4V gate drive devices.

• Large current capacitance

ID = –5 A

Outline

TO-92 Mod

ADE-208-482

1st. Edition

D

321

1. Source

G

2. Drain

3. Gate

S

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