2SJ506L 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SJ506L

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ506(L), 2SJ506(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-548

Target Specification 1st. Edition

Features

• Low on-resistance

RDS(on) = 0.065 Ω typ. (at VGS = –10V, ID = –5A)

• Low drive current

• High speed switching

• 4V gate drive devices.

Outline

DPAK–2

D

G

S

4

4

12 3

12 3

1. Gate

2. Drain

3. Source

4. Drain

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