2SJ518
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
–0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
Ciss
100
Coss
30
Crss
10
3
VGS = 0
1 f = 1 MHz
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –10 V
–25 V
–20
–50 V
–4
–40
V DS
–60
–80
V DD = –10 V
–25 V
–50 V
V GS
–100 I D = –2 A
0
4
8
12 16
Gate Charge Qg (nc)
–8
–12
–16
–20
20
Switching Characteristics
100
50
t d(off)
20
tf
t d(on)
10
tr
5
2
1
–0.1 –0.2
V GS = –10 V, V DD = –30 V
Ta = 25°C, duty < 1 %
–0.5 –1 –2 –5 –10
Drain Current I D (A)
6