Body–Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
10
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
2SJ527(L),2SJ527(S)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
20
10
Crss
5
2 VGS = 0
f = 1 MHz
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –10 V
VDS
–25 V
–20
–50 V
–4
ID = –5 A
–40
–8
–60
–80
–100
0
VGS
–12
V DD = –50 V
–25 V
–10 V –16
4
8
12 16
Gate Charge Qg (nc)
–20
20
Switching Characteristics
100
t d(off)
50
tf
20
t d(on)
10
5
tr
2
1
–0.1 –0.2
VGS = –10 V, VDD = 30 V
duty < 1 %
–0.5 –1 –2 –5 –10
Drain Current I D (A)
5