2SJ543 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

比赛名单

2SJ543

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ543

Silicon P Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.042Ω typ.

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

TO–220AB

D

G

S

ADE-208-652B (Z)

3rd. Edition

Jun 1998

1

2

3

1. Gate

2. Drain

(Flange)

3. Source

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