2SJ550(L),2SJ550(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Zero gate voltege drain current IDSS
Gate to source leak current
I GSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
–60
±20
—
—
–1.0
—
—
6.5
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 4. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
–10 µA
—
±10 µA
—
–2.0 V
0.075 0.095 Ω
0.105 0.155 Ω
11
—
S
850 —
pF
420 —
pF
110 —
pF
12
—
ns
75
—
ns
125 —
ns
75
—
ns
–1.1 —
V
70
—
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –8A, VGS = –10V Note4
ID = –8A, VGS = –4V Note4
ID = –8A, VDS = –10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –8A
RL = 3.75Ω
IF = –15A, VGS = 0
IF = –15A, VGS = 0
diF/ dt =50A/µs
3