2SJ548(2005) 查看數據表（PDF） - Renesas Electronics
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2SJ548 Datasheet PDF : 8 Pages
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2SJ548
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.075 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
G
123
REJ03G0895-0300
(Previous: ADE-208-639A)
Rev.3.00
Sep 07, 2005
D
1. Gate
2. Drain
3. Source
S
Rev.3.00 Sep 07, 2005 page 1 of 7
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