K1697 查看數據表（PDF） - Hitachi -> Renesas Electronics
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K1697 Datasheet PDF : 6 Pages
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2SK1697
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device - - - can be driven from 5 V source.
• Suitable for DC – DC converter, motor drive, power switch, solenoid drive
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
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