2SK2084 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK2084

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2084(L), 2SK2084(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

20

Gate to source breakdown

voltage

V(BR)GSS

±20

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

1.0

Static drain to source on state RDS(on)

—

resistance

—

Forward transfer admittance |yfs|

5

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

100 µA

—

2.5 V

0.04 0.053 Ω

0.058 0.075 Ω

9

—

S

800 —

pF

680 —

pF

165 —

pF

15

—

ns

60

—

ns

100 —

ns

80

—

ns

0.9

—

V

80

—

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 16 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 4 A

VGS = 10 V*1

ID = 4 A

VGS = 4 V*1

ID = 4 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 4 A

VGS = 10 V

RL = 5 Ω

IF = 7 A, VGS = 0

IF = 7 A, VGS = 0,

diF / dt = 20 A / µs

3

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