2SK2695-01 查看數據表（PDF） - Fuji Electric
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2SK2695-01 Datasheet PDF : 3 Pages
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N-channel MOS-FET
700V 1,85Ω ±5A 60W
> Characteristics
2SK2695-01
FAP-IIIB Series
125
100
75
50
25
0
0
Power Dissipation
PD=f(TC)
25
50
75
100
125
150
TC [°C]
120
100
80
60
40
20
0
0
Maximum Avalanche Current vs. starting Tch
IAV=f(starting Tch)
25
50
75
100
125
150
starting Tch [°C]
This specification is subject to change without notice!
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