RMDA20420(2002) 查看數據表（PDF） - Raytheon Company
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RMDA20420 Datasheet PDF : 9 Pages
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RMDA20420
20-42 GHz General Purpose MMIC Amplifier
Figure 3
Schematic of
Application Circuit
Bond Wire Ls
10,000pF
ADVANCED INFORMATION
Drain Supply (Vd)
(Connect to both Vd1 & Vd3)
100pF
RF IN
MMIC Chip
Vd1 Vg2 Vd2
Vd3
Vd4
alt
RF OUT
Vg1
Vg2
Vg3
Vg4
Ground
(Back of Chip) 100pF
Bond Wires Ls
Figure 4
Recommended
Assembly and
Bonding Diagram
Gate Supply (Vg)
(VGA and/or VGB)
10,000pF
Note: For currents > 370 mA connect all
four drain pads to the 100pF capacitor.
5mil Thick
Alumina
50-Ohm
10,000pF
Vd1
RF
Input
L< 0.015”
2 mil Gap
Vg1
Vg2
100pF
Vg
(Negative)
Vd
(Positive)
Vg2 alt
100pF
Interchangeable Vd Bond Pads
Die-Attach
80Au/20Sn
Vd2
Vd3
Vd4
5 mil Thick
Alumina
50-Ohm
Vg3
Vg4
Interchangeable Vg Bond Pads
10,000pF
RF
Output
L< 0.015”
www.raytheonrf.com
Notes:
1. Die-attach with 80Au/20Sn
2. Use 0.003” x 0.0005” gold ribbon for bonding.
3. RF input and output bonds should be less than 0.015” long with stress relief.
4. For currents > 370 mA connect all drain pads (Vd1, Vd2, Vd3, & Vd4) to the 100 pF capacitor.
5. Back of chip is DC and RF ground
Characteristic performance data and specifications are subject to change without notice.
Revised March 6, 2002
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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