2SK4020(2006) 查看數據表（PDF） - Toshiba

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2SK4020
(Rev.:2006)

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Gate leakage current

Drain cutoff current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON-resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = 200 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 2.5 A

VDS = 10 V, ID = 2.5 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

2SK4020

Min Typ. Max Unit

—

—

±10

μA

—

—

100

μA

200

—

—

V

1.5

—

3.5

V

— 0.56 0.8

Ω

2.0 4.5

—

S

— 440 —

—

35

—

pF

— 120 —

—

15

—

Turn-on time

ton

Switching time

Fall time

tf

—

20

—

ns

—

15

—

Turn-off time

Total gate charge (gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“Miller”) Charge

toff

Qg

Qgs

VDD ≈ 100 V, VGS = 10 V, ID = 5 A

Qgd

—

60

—

—

10

—

—

6

—

nC

—

4

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

IDR

IDRP

VDSF

trr

Qrr

—

—

—

5

A

—

—

—

20

A

IDR = 5 A, VGS = 0 V

—

—

−2.0

V

— 150 —

ns

IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / μs

— 0.45 —

μC

Marking

K4020

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-21

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