VS-60EPU02-N3(2019) 查看數據表（PDF） - Vishay Semiconductors
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VS-60EPU02-N3 Datasheet PDF : 6 Pages
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www.vishay.com
VS-60EPU02-N3, VS-60APU02-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
-
Reverse recovery time
trr
TJ = 25 °C
-
28
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
50
IF = 60 A
-
4
dIF/dt = 200 A/μs
VR = 160 V
-
8
-
59
-
220
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance, junction to case
Thermal resistance, junction to ambient
per leg
RthJC
RthJA
Typical socket mount
Thermal resistance, case to heatsink
RthCS
Mounting surface, flat, smooth,
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC 2L
Case style TO-247AC 3L
MIN.
-
-
-
-
-
-
TYP.
-
-
MAX.
0.70
40
UNITS
K/W
°C/W
0.2
-
5.5
-
0.2
-
-
1.2
60EPU02
60APU02
K/W
g
oz.
N⋅m
1000
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 25 °C
1
0
0.5
1
1.5
2
2.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
TJ = 175 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
50
100
150
200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 29-Nov-2019
2
Document Number: 94021
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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