74LVC3G04 查看數據表（PDF） - Philips Electronics
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74LVC3G04 Datasheet PDF : 13 Pages
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Philips Semiconductors
74LVC3G04
Triple inverter
Table 7: Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ Max
Unit
VIL
LOW-level input
voltage
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
-
-
0.35 × VCC V
-
-
0.7
V
VCC = 2.7 V to 3.6 V
VCC = 4.5 V to 5.5 V
-
-
0.8
V
-
-
0.3 × VCC V
VOL
LOW-level output
VI = VIH or VIL
voltage
IO = 100 µA; VCC = 1.65 V to 5.5 V
-
-
0.1
V
IO = 4 mA; VCC = 1.65 V
-
-
0.70
V
IO = 8 mA; VCC = 2.3 V
IO = 12 mA; VCC = 2.7 V
-
-
0.45
V
-
-
0.60
V
IO = 24 mA; VCC = 3.0 V
-
-
0.80
V
IO = 32 mA; VCC = 4.5 V
-
-
0.80
V
VOH
HIGH-level output
VI = VIH or VIL
voltage
IO = −100 µA; VCC = 1.65 V to 5.5 V
VCC − 0.1 -
-
V
IO = −4 mA; VCC = 1.65 V
0.95
-
-
V
IO = −8 mA; VCC = 2.3 V
1.7
-
-
V
IO = −12 mA; VCC = 2.7 V
1.9
-
-
V
IO = −24 mA; VCC = 3.0 V
2.0
-
-
V
IO = −32 mA; VCC = 4.5 V
3.4
-
-
V
ILI
input leakage current VI = 5.5 V or GND; VCC = 5.5 V
-
-
±20
µA
Ioff
power-off leakage
VI or VO = 5.5 V; VCC = 0 V
current
-
-
±20
µA
ICC
∆ICC
quiescent supply
current
additional quiescent
supply current per pin
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
VI = VCC − 0.6 V; IO = 0 A;
VCC = 2.3 V to 5.5 V
-
-
40
µA
-
-
5 000
µA
[1] All typical values are measured at VCC = 3.3 V and Tamb = 25 °C.
11. Dynamic characteristics
Table 8: Dynamic characteristics
GND = 0 V; for test circuit see Figure 6.
Symbol Parameter
Tamb = −40 °C to +85 °C [1]
tPHL, tPLH propagation delay input
nA to output nY
CPD
power dissipation capacitance
Conditions
see Figure 5
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
VCC = 3.3 V
Min Typ Max Unit
1.0 3.5 8.0 ns
0.5 2.2 4.4 ns
0.5 2.7 5.2 ns
0.5 2.7 4.1 ns
0.5 1.9 3.2 ns
[2] [3] -
13.5 -
pF
9397 750 13075
Product data sheet
Rev. 01 — 4 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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