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74LVC3G06 查看數據表(PDF) - NXP Semiconductors.

零件编号
产品描述 (功能)
比赛名单
74LVC3G06
NXP
NXP Semiconductors. NXP
74LVC3G06 Datasheet PDF : 21 Pages
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NXP Semiconductors
74LVC3G06
Triple inverter with open-drain output
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 9.
Symbol Parameter
Conditions
40 °C to +85 °C
Min
Typ[1]
tpd
propagation delay nA to nY; see Figure 8
[2]
VCC = 1.65 V to 1.95 V
1.0
2.6
VCC = 2.3 V to 2.7 V
0.5
1.6
VCC = 2.7 V
1.0
2.2
VCC = 3.0 V to 3.6 V
0.5
2.0
VCC = 4.5 V to 5.5 V
0.5
1.4
CPD
power dissipation VI = GND to VCC; VCC = 3.3 V [3] -
5.9
capacitance
Max
6.5
3.9
4.2
3.4
2.9
-
40 °C to +125 °C Unit
Min
Max
1.0
8.2
ns
0.5
4.9
ns
1.0
5.3
ns
0.5
4.3
ns
0.5
3.7
ns
-
-
pF
[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLZ and tPZL.
[3] CPD is used to determine the dynamic power dissipation (PD in μW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of outputs.
12. Waveforms
VI
nA input
GND
VCC
nY output
VOL
VM
t PLZ
VX
Measurement points are given in Table 9.
VOL is the typical output voltage level that occurs with the output load.
Fig 8. The input (nA) to output (nY) propagation delays
t PZL
VM
mnb033
74LVC3G06
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 9 August 2010
© NXP B.V. 2010. All rights reserved.
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