74LVC3G34 查看數據表（PDF） - NXP Semiconductors.

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74LVC3G34

Triple buffer

NXP Semiconductors. 

NXP Semiconductors

74LVC3G34

Triple buffer

11. Dynamic characteristics

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.

Symbol Parameter

Conditions

−40 °C to +85 °C

Min

Typ[1] Max

tpd

propagation delay nA to nY; see Figure 8

[2]

VCC = 1.65 V to 1.95 V

1.0

3.8

8.6

VCC = 2.3 V to 2.7 V

0.5

2.4

4.4

VCC = 2.7 V

0.5

2.5

5.0

VCC = 3.0 V to 3.6 V

0.5

2.2

4.1

VCC = 4.5 V to 5.5 V

0.5

1.9

3.2

CPD

power dissipation VI = GND to VCC; VCC = 3.3 V [3] -

capacitance

14

-

−40 °C to +125 °C Unit

Min

Max

1.0

10.8 ns

0.5

5.5

ns

0.5

6.3

ns

0.5

5.1

ns

0.5

4.0

ns

-

-

pF

[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2] tpd is the same as tPLH and tPHL.

[3] CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(CL × VCC2 × fo) = sum of outputs.

74LVC3G34_7

Product data sheet

Rev. 07 — 9 May 2008

© NXP B.V. 2008. All rights reserved.

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