CR20F 查看數據表（PDF） - MITSUBISHI ELECTRIC

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CR20F

MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR20F

MEDIUM POWER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

IRRM

IDRM

VTM

dv/dt

VGT

VGD

IGT

tgt

Rth (j-c)

Rth (c-f)

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Critical-rate of rise of off-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Turn-on time

Thermal resistance

Contact thermal resistance

Tj=125°C, VRRM applied

Tj=125°C, VDRM applied

Tc=25°C, ITM=60A, Instantaneous value

Tj=125°C, VD=2/3VDRM

Tj=25°C, VD=6V, IT=0.5A

Tj=125°C, VD=1/2VDRM

Tj=25°C, VD=6V, IT=0.5A

Tc=25°C, VD=100V, IT=15A, IG=0.1A

Junction to case

Case to fin

Min.

—

—

—

50

—

0.25

—

—

—

—

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

Max.

4.0

4.0

1.8

—

3.0

—

50

10

1.0

0.4

Unit

mA

mA

V

V

V

V

mA

µs

°C/W

°C/W

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS

103

7

5

Tc = 25°C

3

2

102

7

5

125°C

3

2

101

7

5

3

2

100

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

320

280

240

200

160

120

80

40

0

100

2 3 4 5 7 101

2 3 4 5 7 102

CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999

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