P4C147 查看數據表（PDF） - Performance Semiconductor
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P4C147 Datasheet PDF : 6 Pages
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P4C147
P4C147
ULTRA HIGH SPEED 4K x 1
STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25 ns (Commercial)
– 15/20/25/35 ns (Military)
Low Power Operation
– 715 mW Active –10 (Commercial)
– 550 mW Active –25 (Commercial)
– 110 mW Standby (TTL Input)
– 55 mW Standby (CMOS Input)
Single 5V ± 10% Power Supply
Separate Input and Output Ports
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 18 Pin 300 mil DIP
– 18 Pin CERPACK
– 18 Pin LCC (290 x 430 mils)
DESCRIPTION
The P4C147 is a 4,096-bit ultra high speed static RAM
organized as 4K x 1. The CMOS memories require no
clocks or refreshing, and have equal access and cycle
times. Inputs are fully TTL-compatible. The RAM operates
from a single 5V ± 10% tolerance power supply.
Access times as fast as 10 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is utilized to reduce power consumption in both
active and standby modes. In addition to very high
performance, this device features latch-up protection and
single-event-upset protection.
The P4C147 is available in 18 pin 300 mil DIP packages
as well as an 18-pin CERPACK package and LCC.
FUNCTIONAL BLOCK DIAGRAM
A
(6) A
ROW
SELECT
4,096-BIT
MEMORY
ARRAY
DIN
CE
WE
INPUT
DATA
CONTROL
COLUMN I/O
COLUMN
SELECT
A
A
(6)
PIN CONFIGURATIONS
DOUT
A0 1
A1 2
A2 3
A3 4
A4 5
A5 6
DOUT 7
WE 8
GND 9
18 VCC
17 A11
16 A10
15 A9
14 A8
2
17
18
A2
31
16 A10
A3 4
15 A9
A4
5
14 A8
13 A7
12 A6
11 DIN
10 CE
A5
6
13 A7
DOUT 7
12 A6
9 10
8
11
DIP (P1, D1), CERPACK (F1) SIMILAR
LCC (L7)
TOP VIEW
Means Quality, Service and Speed
1Q97
13
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