EV-ADF4153SD1Z(RevF) 查看數據表（PDF） - Analog Devices
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EV-ADF4153SD1Z Datasheet PDF : 24 Pages
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ADF4153
Data Sheet
SPECIFICATIONS
AVDD = DVDD = SDVDD = 2.7 V to 3.3 V; VP = AVDD to 5.5 V; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted;
dBm referred to 50 Ω.
Table 1.
Parameter
RF CHARACTERISTICS (3 V)
RF Input Frequency (RFIN)
REFERENCE CHARACTERISTICS
REFIN Input Frequency
REFIN Input Sensitivity
REFIN Input Capacitance
REFIN Input Current
PHASE DETECTOR
Phase Detector Frequency4
CHARGE PUMP
ICP Sink/Source
High Value
Low Value
Absolute Accuracy
RSET Range
ICP Three-State Leakage Current
Matching
ICP vs. VCP
ICP vs. Temperature
LOGIC INPUTS
VINH, Input High Voltage
VINL, Input Low Voltage
IINH/IINL, Input Current
CIN, Input Capacitance
LOGIC OUTPUTS
VOH, Output High Voltage
VOL, Output Low Voltage
POWER SUPPLIES
AVDD
DVDD, SDVDD
VP
IDD
Low Power Sleep Mode
B Version1
0.5/4.0
0.5/4.0
1.0/4.0
10/250
0.7/AVDD
10
±100
Y Version2
0.5/4.0
0.5/4.0
1.0/4.0
10/250
0.7/AVDD
10
±100
Unit
GHz min/max
GHz min/max
GHz min/max
MHz min/max
V p-p min/max
pF max
µA max
Test Conditions/Comments
See Figure 12 for input circuit
B Version: −8 dBm minimum/0 dBm maximum
Y Version: −6.5 dBm minimum/0 dBm maximum
For lower frequencies, ensure slew rate (SR) > 400 V/µs
−10 dBm/0 dBm minimum/maximum
See Figure 11 for input circuit
For f < 10 MHz, use a dc-coupled, CMOS-compatible
square wave; slew rate > 25 V/µs
Biased at AVDD/23
32
32
MHz max
5
312.5
2.5
1.5/10
1
2
2
2
5
312.5
2.5
1.5/10
4.5
2
2
2
mA typ
µA typ
% typ
kΩ min/max
nA typ
% typ
% typ
% typ
Programmable; see Table 9
With RSET = 5.1 kΩ
With RSET = 5.1 kΩ
Sink and source current
0.5 V < VCP < VP – 0.5
0.5 V < VCP < VP – 0.5
VCP = VP/2
1.4
1.4
V min
0.6
0.6
V max
±1
±1
µA max
10
10
pF max
1.4
1.4
V min
0.4
0.4
V max
Open-drain 1 kΩ pull-up to 1.8 V
IOL = 500 µA
2.7/3.3
AVDD
AVDD/5.5
24
1
2.7/3.3
AVDD
AVDD/5.5
24
1
V min/V max
V min/V max
mA max
µA typ
20 mA typical
Rev. F | Page 4 of 24
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