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ADF4196 查看數據表(PDF) - Analog Devices

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ADF4196 Datasheet PDF : 28 Pages
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Data Sheet
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to Ground
AVDD to DVDD1, DVDD2, DVDD3, SDVDD
VP1, VP2, VP3 to Ground
VP1, VP2, VP3 to AVDD
Digital I/O Voltage to Ground
Analog I/O Voltage to Ground
REFIN, RFIN+, RFIN− to Ground
Operating Temperature Range
Industrial
Storage Temperature Range
Maximum Junction Temperature
Reflow Soldering
Peak Temperature
Time at Peak Temperature
Rating
−0.3 V to +3.6 V
−0.3 V to +0.3 V
−0.3 V to +5.8 V
−0.3 V to +5.8 V
−0.3 V to VDD + 0.3 V
−0.3 V to VP1, VP2, VP3 + 0.3 V
−0.3 V to VDD + 0.3 V
−40°C to +85°C
−65°C to +125°C
150°C
260°C
40 sec
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with
an ESD rating of <2 kV, and it is ESD sensitive. Take proper
precautions for handling and assembly.
ADF4196
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
θJA
32-Lead LFCSP (Paddle Soldered) 27.3
Unit
°C/W
TRANSISTOR COUNT
This device includes 75,800 metal oxide semiconductors (MOS)
and 545 bipolar junction transistors (BJT).
ESD CAUTION
Rev. B | Page 5 of 28

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