ADP3211A 查看數據表（PDF） - ON Semiconductor
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ADP3211A Datasheet PDF : 32 Pages
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ADP3211, ADP3211A
ELECTRICAL CHARACTERISTICS (VCC = PVCC = 5.0 V, FBRTN = GND = PGND = 0 V, H = 5.0 V, L = 0 V, VVID = VDAC = 1.2 V,
TA = −10°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sunk by the device) has a positive sign.
Parameter
Symbol
Conditions
Min Typ Max Units
HIGH−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing Current
Pulldown Resistance, Sinking Current
BST = PVCC
2.0
3.3
W
1.0
2.8
Transition Times
Dead Delay Times
BST Quiescent Current
trDRVH,
tfDRVH
tpdhDRVH
BST = PVCC, CL = 3 nF, Figure 2
BST = PVCC, Figure 2
EN = L (Shutdown)
EN = H, No Switching
15
35
ns
13
31
10
45
ns
5.0
15
mA
200
LOW−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing Current
Pulldown Resistance, Sinking Current
1.8
3.0
W
0.9
2.7
Transition Times
Propagation Delay Times
SW Transition Timeout
SW Off Threshold
PVCC Quiescent Current
trDRVL,
tfDRVL
tpdhDRVL
tSWTO
VOFFSW
CL = 3 nF, Figure 2
CL = 3 nF, Figure 2
DRVH = L, SW = 2.5 V
EN = L (Shutdown)
EN = H, No Switching
15
35
ns
14
35
15
30
ns
150
250
450
ns
2.2
V
14
50
mA
200
BOOTSTRAP RECTIFIER SWITCH
On−Resistance
EN = L or EN = H and DRVL = H
4
7
11
W
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Timing is referenced to the 90% and 10% points, unless otherwise noted.
DRVL
tfDRVL
trDRVL
DRVH
(with respect to SW)
SW
tpdhDRVH
trDRVH
VTH
tfDRVH
VTH
Figure 2. Timing Diagram
1.0 V
tpdhDRVL
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