ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110800A / ALD110900A ALD110800/ ALD110900
Parameter
Symbol
Min
Typ
Max Min Typ Max
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
Unit
Test Conditions
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
VGS(th)
VOS
TCVOS
TCVGS(th)
-0.01
On Drain Current
Forward Transconductance
IDS (ON)
GFS
0.00
1
5
-1.7
0.0
+1.6
12.0
3.0
1.4
0.01 -0.02 0.00
2
2
5
-1.7
0.0
+1.6
12.0
3.0
1.4
Transconductance Mismatch
∆GFS
1.8
1.8
Output Conductance
GOS
68
68
Drain Source On Resistance
RDS (ON)
500
500
Drain Source On Resistance
RDS (ON)
104
104
Drain Source On Resistance
∆RDS (ON)
5
5
Tolerance
0.02 V
10 mV
IDS =1µA, VDS = 0.1V
µV/°C VDS1 = VDS2
mV/°C
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
mA
VGS = +9.5V, VDS = +5V
VGS = +4.0V, VDS = +5V
mmho VGS = +4.0V
VDS = +9.0V
%
µmho
Ω
VGS = +4.0V
VDS = +9.0V
VDS = +0.1V
VGS = +4.0V
KΩ
VDS = +0.1V
VGS = +0.0V
%
VDS = +0.1V
VGS = +4.0V
Drain Source On Resistance
Mismatch
∆RDS (ON)
Drain Source Breakdown
BVDSX
10
Voltage
Drain Source Leakage Current1 IDS (OFF)
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
CISS
CRSS
ton
0.5
10
400
4
5
30
1
2.5
0.1
10
0.5
10
10
5
2.5
0.1
10
%
V
400 pA
4 nA
30 pA
1 nA
pF
pF
ns
IDS = 1.0µA
V-= VGS = -1.0V
VGS = -1.0V, VDS =+5V
V- = -5V
TA = 125°C
VDS = 0V VGS = +10V
TA =125°C
V+ = 5V RL= 5KΩ
Turn-off Delay Time
toff
Crosstalk
Notes: 1 Consists of junction leakage currents
ALD110800/ALD110800A/ALD110900/ALD110900A
10
10
60
60
Advanced Linear Devices
ns
V+ = 5V RL= 5KΩ
dB
f = 100KHz
2