ALD110814 查看數據表（PDF） - Advanced Linear Devices

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ALD110814

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY

Advanced Linear Devices 

TYPICAL PERFORMANCE CHARACTERISTICS (cont.)

10000

1000

GATE LEAKAGE CURRENT

vs. AMBIENT TEMPERATURE

100

10

1

IGSS

0.1

0.01

-50 -25 0

25 50 75 100 125

AMBIENT TEMPERATURE (°C)

VGS(th)+4

VGS(th)+3

VGS(th)+2

VGS(th)+1

GATE SOURCE VOLTAGE vs.

DRAIN-SOURCE ON RESISTANCE

+25°C

+125°C

0.0V ≤ VDS ≤ 5.0V

D VDS

VGS

S

IDS(ON)

VGS(th)

0

2

4

6

8

10

DRAIN-SOURCE ON RESISTANCE (KΩ)

DRAIN-GATE DIODE CONNECTED VOLTAGE

TEMPCO vs. DRAIN-SOURCE ON CURRENT

5

-55°C ≤ TA ≤ +125°C

2.5

0

-2.5

-5

1

10

100

1000

DRAIN-SOURCE ON CURRENT (µA)

TRANSFER CHARACTERISTICS

1.6

TA = +25°C

VDS = +10V

1.2

VGS(th) = -3.5V

VGS(th) = -1.3V

VGS(th) = -0.4V

0.8

0.4

0.0

-4

VGS(th) = 0.0V

VGS(th) = +0.2V

VGS(th) = +0.8V

VGS(th) = +1.4V

-2 0

2

4

6

8 10

GATE-SOURCE VOLTAGE (V)

ZERO TEMPERATURE

COEFFICIENT CHARACTERISTICS

0.6

VGS(th) = -3.5V

0.5

VGS(th) = -1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V

0.3

0.2

0.0

0.1

0.2

0.5

1.0

2.0

5.0

DRAIN-SOURCE ON VOLTAGE (V)

SUBTHRESHOLD CHARACTERISTICS

2.5

2.0

1.5

VGS(th) = +0.4V

TA = +25°C

1.0

VGS(th) = +0.4V

TA = +55°C

0.5

0.0

-0.5

VGS(th) = +0.2V

TA = +25°C

VGS(th) = +0.2V

TA = +55°C

100000 10000 1000 100 10

1

0.1

DRAIN-SOURCE ON CURRENT (nA)

ALD110814/ALD110914, Vers. 2.3

Advanced Linear Devices

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