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AN207

12-ns DG611 Switch Family Combines Benefits of CMOS and DMOS Technologies

Vishay Semiconductors 

AN207

Vishay Siliconix

VL

V+

V–

S

D

IN

DMOS Switch

Input Logic

V–

Level Translator

Driver

FIGURE 2. Typical Channel Block Diagram

The level translator provides level shifting of the 0 to 5 V logic

input to the V+ to V– voltage excursions needed to control the

MOSFET switch.

The driver stage acts as a buffer and provides current

amplification to quickly charge/discharge the MOSFET gate,

thus quickly turning the switch ON or OFF.

The switching element is an n-channel double-diffused

enhancement-mode MOSFET. DMOS FETs achieve very low

inter-electrode capacitance and high speed, thanks to their

lateral construction. To turn the switch ON, a voltage equal to

V+ is applied to the FET’s gate. This enhances the channel into

conduction.

The source and Drain terminals can stand up to 16 V with

respect to the substrate voltage (V–).

ESD protection diode pairs are connected from each logic

input, source, and drain pin to the V+ and V- power supply rails.

Optimized Characteristics

The DG611 family was designed to optimize the parameters

which are most important in high-speed applications.

Switching Speed

Discrete DMOS FETs such as the SD210 or SD5000 are well

known for their fast switching speeds. In fact, both specify a

td(on) of 1 ns max. The DG611 family combines fast DMOS

switching elements with a low-power CMOS driver. These

devices are so fast that measuring their speed at final test

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6-2

becomes a challenge. ATE limitations (lead

inductances/capacitances, generator’s rise and fall times)

conspire to slow things down. This is why the tON/tOFF

specifications on the data sheet are so loose (35 ns max).

A typical device in a typical application is much faster than the

data-sheet specifications would indicate. A bench test circuit

reduced test fixture parasitics, while a low capacitance (3 pF)

FET probe was used to monitor the output voltage. Figure 3

shows that before the output starts to change there was a

propagation delay through the driver of about 8 ns. Once the

FET starts to turn on, the output voltage rises very fast. The

rise time was approximately 2 ns. Total tON (50% Vin to 90%

Vout) was approximately 12 ns. Similarly at turn-off the

driver’s propagation delay appeared to be about 8 ns, the fall

time was about 5 ns. tOFF (50% VIN to 90% VOUT) was about

7 ns.

Reduced Switching Transients

By adding two dynamic compensation capacitors to the output

driver stage, charge injection glitches have been virtually

eliminated. For comparison purposes, Figure 4 illustrates the

typical charge injection characteristics for two Vishay Siliconix’

high-speed analog switches: DG271 and DG611. Note how

flat the DG611 characteristic is. This guarantees low charge

injection regardless of analog signal voltage.

Charge injection causes switching glitches both at turn-on and

at turn-off times. To evaluate and compare the switching

glitches produced by the DG611, the test circuit of Figure 5

was built. A 4-Vp-p triangular bipolar wave form was fed to the

switch input. On this wave form we wanted to cut some 0-V

notches as commanded by a pulse train. 100-ns pulses were

used to interrupt signal flow twice in every period letting the

output voltage to fall to 0 V.

Document Number: 70605

03-Aug-99

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