AOD402 查看數據表（PDF） - Alpha and Omega Semiconductor
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AOD402 Datasheet PDF : 4 Pages
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AOD402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1
2.4
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
A
RDS(ON) Static Drain-Source On-Resistance
VGS=20V, ID=18A
VGS=10V, ID=18A
VGS=4.5V, ID=6A
TJ=125°C
12
15
mΩ
17.4 21
15
18
36
44 mΩ
gFS
Forward Transconductance
VDS=5V, ID=18A
24
S
VSD
Diode Forward Voltage
IS=18A, VGS=0V
0.8
1
V
IS
Maximum Body-Diode Continuous Current
18
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
769
pF
185
pF
131
pF
0.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=10V, ID=18A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=18A,
RL=0.82Ω, RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
15.9
nC
2.44
nC
4.92
nC
6.2
ns
10.9
ns
16
ns
4.8
ns
18
ns
8.1
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depend
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires. Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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