AON7432 查看數據表（PDF） - Unspecified
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AON7432 Datasheet PDF : 6 Pages
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AON7432
30V N-Channel MOSFET
General Description
The AON7432 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R . DS(ON) This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
30V
18A
< 15mΩ
< 18mΩ
< 24mΩ
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
18
14
60
10.5
8.5
17
14
20.8
8.3
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
30
60
Maximum Junction-to-Case
Steady-State
RθJC
5
Max
40
75
6
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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