AP2213(2007) 查看數據表（PDF） - BCD Semiconductor

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AP2213
(Rev.:2007)

500mA LOW NOISE LDO REGULATOR

BCD Semiconductor 

500mA LOW NOISE LDO REGULATOR

Typical Performance Characteristics (Continued)

Data Sheet

AP2213

1

0.5

0

10mA

-0.5

AP2213-2.5

0

-10

-20

-30

Time (200µs/Div)

Figure 12. Load Transient

(Conditions: VIN=3.5V, CBYP=100pF, VEN=2V,

IOUT=10 to 500mA, CIN=1µF, COUT=2.2µF)

5.5

4.5

AP2213-2.5

3.5

2.5

10

0

-10

-20

Time (200µs/Div)

Figure 13. Line Transient

(Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100µA,

CBYP=100pF, COUT=2.2µF)

3

AP2213-2.5

2

1

0

2

1

0

-1

Time (40µs/Div)

Figure 14. VEN vs. VOUT

(Conditions: VEN=0 to 2V, VIN=3.5V, IOUT=30mA,

CBYP=open, CIN=1µF, COUT=2.2µF)

100

90

AP2213-2.5

V =3.5V, V =1V

IN

RIPPLE

PP

80

I =10mA, C =2.2µF

OUT

OUT

70

60

50

40

30

20

10

0

10

100

1k

10k

100k

1M

Frequency (Hz)

Figure 15. PSRR vs. Frequency

Mar. 2007 Rev. 1. 2

BCD Semiconductor Manufacturing Limited

14

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