RFP2N12L 查看數據表（PDF） - Intersil
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RFP2N12L Datasheet PDF : 5 Pages
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Data Sheet
RFP2N12L
April 1999 File Number 2874.2
2A, 120V, 1.750 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP2N12L is an N-Channel enhancement mode silicon
gate power field effect transistor specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09528.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N12L
TO-220AB
RFP2N12L
NOTE: When ordering, include the entire part number.
Features
• 2A, 120V
• rDS(ON) = 1.750Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
JEDEL TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-252
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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