RFP2N20L 查看數據表（PDF） - Intersil
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RFP2N20L Datasheet PDF : 5 Pages
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RFP2N20L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage RGS = 20KΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Linearly Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFP2N20L
200
200
±10
2
4
25
0.2
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/ oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
SYMBOL
TEST CONDITIONS
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V,
VGS = ±10V, VDS = 0
ID = 2A, VGS = 5V
rDS(ON)
td(ON)
tr
td(OFF)
tf
CISS
COSS
ID = 2A, VGS = 5V (Figures 6, 7)
ID = 2A, VDD = 100V, RG = 6.25Ω, VGS = 5V
RL = 50Ω (Figures 10, 11, 12)
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
CRSS
RθJC
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Reverse Recovery Time
trr
ISD = 2A, dlSD/dt = 50A/µs
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
200
-
-
V
1
-
2
V
-
-
1
µA
-
-
25
µA
-
- ±100 nA
-
-
7
V
-
- 3.500 Ω
-
10
25
ns
-
10
30
ns
-
25
40
ns
-
20
25
ns
-
-
200
pF
-
-
60
pF
-
-
35
pF
-
-
5
oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
200
-
ns
6-257
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