RFP2N08L 查看數據表（PDF） - Intersil

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RFP2N08L

2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

Intersil 

Data Sheet

RFP2N08L, RFP2N10L

July 1999 File Number 2872.2

2A, 80V and 100V, 1.050 Ohm, Logic Level,

N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement

mode silicon gate power field effect transistors specifically

designed for use with logic level (5V) driving sources in

applications such as programmable controllers, automotive

switching, and solenoid drivers. This performance is

accomplished through a special gate oxide design which

provides full rated conductance at gate biases in the 3V to 5V

range, thereby facilitating true on-off power control directly

from logic circuit supply voltages.

Formerly developmental type TA0924.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP2N08L

TO-220AB

RFP2N08L

RFP2N10L

TO-220AB

RFP2N10L

NOTE: When ordering, include the entire part number.

Features

• 2A, 80V and 100V

• rDS(ON) = 1.050Ω

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

6-248

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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