ATF-33143-TR1 查看數據表（PDF） - HP => Agilent Technologies
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ATF-33143-TR1
HP => Agilent Technologies
ATF-33143-TR1 Datasheet PDF : 14 Pages
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ATF-33143 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
Pdiss
Pin max
TCH
TSTG
θjc
Parameter
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Total Power Dissipation[4]
RF Input Power
Channel Temperature[5]
Storage Temperature
Thermal Resistance[6]
Units
V
V
V
mA
mW
dBm
°C
°C
° C/W
Absolute
Maximum
5.5
-5
-5
Idss[3]
600
20
160
-65 to 160
145
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0 V
4. Source lead temperature is 25°C.
Derate 6␣ mW/ °C for TL > 60°C.
5. Please refer to failure rates in reliability
section to assess the reliability impact
of running devices above a channel
temperature of 140°C.
6. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
500
+0.6 V
400
300
0V
200
100
–0.6 V
0
0
2
4
6
8
VDS (V)
Figure 1. Typical Pulsed I-V Curves [7].
(VGS = -0.2 V per step)
Product Consistency Distribution Charts [8, 9]
120
Cpk = 1.7
Std = 0.05
100
80
-3 Std
60
+3 Std
40
20
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8
NF (dB)
Figure 2. NF @ 2 GHz, 4 V, 80 mA.
LSL=0.2, Nominal=0.53, USL=0.8
100
80
60
-3 Std
40
20
Cpk = 1.21
Std = 0.94
+3 Std
120
100
80
-3 Std
+3 Std
60
40
20
Cpk = 2.3
Std = 0.2
0
29
31
33
35
37
OIP3 (dBm)
Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA.
LSL=30.0, Nominal=33.3, USL=37.0
0
13
14
15
16
17
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4 V, 80 mA.
LSL=13.5, Nominal=14.8, USL=16.5
Notes:
7. Under large signal conditions, VGS may
swing positive and the drain current may
exceed Idss. These conditions are
acceptable as long as the maximum Pdiss
and Pin max ratings are not exceeded.
8. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
9. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production
test requirements. Circuit losses have
been de-embedded from actual
measurements.
10. The probability of a parameter being
between ±1σ is 68.3%, between ±2σ is
95.4% and between ±3σ is 99.7%.
2
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