ATF-35143 查看數據表（PDF） - HP => Agilent Technologies
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ATF-35143 Datasheet PDF : 19 Pages
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ATF-35143 Typical Performance Curves, continued
1.50
1.25
1.00
25
5 mA
15 mA
30 mA
20
0.75
15
0.50
0.25
5 mA
15 mA
30 mA
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 2V.
10
5
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
22
1.0
25
20
0.8
20
18
0.6
16
25°C
15
-40°C 0.4
85°C
25°C
-40°C
85°C
10
14
0.2
12
0
0
2
4
6
8
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature, VDS= 2 V, I DS= 15 mA.
25
2.5
20
2
15
1.5
10
1
5
P1dB 0.5
OIP3
Gain
NF
0
0
0
20
40
60
80
IDS (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2 V, 3.9 GHz).
5
0
2
4
6
8
FREQUENCY (GHz)
Figure 15. OIP3 and P1dB vs. Frequency
and Temperature[1,2], VDS= 2 V, I DS= 15mA.
25
3
20
2.5
15
2
10
1.5
5
1
P1dB
0
OIP3 0.5
Gain
NF
-5
0
0
20
40
60
80
IDS (mA)
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2 V, 5.8 GHz).
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is
running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V
and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
5
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