BAP51-04W 查看數據表（PDF） - NXP Semiconductors.
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BAP51-04W Datasheet PDF : 7 Pages
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Philips Semiconductors
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
τL
charge carrier life time
LS
series inductance
IF = 50 mA
IR = 10 µA
VR = 50 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
IF = 10 mA; f = 100 MHz
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Preliminary specification
BAP51-04W
MIN. TYP. MAX. UNIT
−
0.95 1.1 V
50
−
−
V
−
−
100 nA
−
0.4 −
pF
−
0.3 0.55 pF
−
0.2 0.35 pF
−
5.5 9
Ω
−
3.6 6.5 Ω
−
1.5 2.5 Ω
−
550 −
ns
−
1.6 −
nH
VALUE
250
UNIT
K/W
2002 Feb 19
3
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