NXP Semiconductors
BAP51-06W
General purpose PIN diode
0
Lins
(dB)
−0.5
−1
(1) (2) (3)
001aai135
0
ISL
(dB)
−10
−20
001aai136
−1.5
−30
−2
−40
−2.5
0.5
1
1.5
2
2.5
3
f (GHz)
−50
0.5
1
1.5
2
2.5
3
f (GHz)
(1) IF = 10 mA
(2) IF = 1 mA
(3) IF = 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Fig 3. Insertion loss of the diode as a function of
frequency; typical values
Diode zero biased and inserted in series with a 50 Ω
stripline circuit; Tamb = 25 °C.
Fig 4. Isolation of the diode as a function of
frequency; typical values
BAP51-06W_1
Product data sheet
Rev. 01 — 26 May 2008
© NXP B.V. 2008. All rights reserved.
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