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BAS16X 查看數據表(PDF) - Willas Electronic Corp.

零件编号
产品描述 (功能)
比赛名单
BAS16X
Willas
Willas Electronic Corp. Willas
BAS16X Datasheet PDF : 3 Pages
1 2 3
WILLAS
SOD-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS16XTHRU
FM1200-M+
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
O u t l i n e D r a w i n g Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
.051(1.30) RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mec.0h4a3n(ic1a.1l 0d)ata
Epoxy : UL94-V0 rated flame retardant
Package outline
S O D - 5 2 3 SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
.028(0.70)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.020(0.50)
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Vo
Maximum RMS Voltage
.067(1.70)VRMS 14 21 28 35 42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
56
70
105
140 Vo
80
100
150
200 Vo
.059(1.50) Maximum Average Forward Rectified Current
IO
1.0
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
Am
Typical Thermal Resistance (Note 2)
RΘJA
40
Typical Junction Capacitance (Note 1)
CJ
120
P
Operating Temperature Range
TJ
-55 to +125
-55 to +150
Storage Temperature Range
.006(0.15TS)TMG IN.
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
IR
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
Dimensions in inches and (millimeters)
WILLAS ELECTRReOvN.CIC CORP.
WILLAS ELECTRONIC CORP.

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