BB303M 查看數據表（PDF） - Hitachi -> Renesas Electronics
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BB303M Datasheet PDF : 14 Pages
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BB303M
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
7
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
V(BR)G1SS
+7
V(BR)G2SS
+7
I G1SS
—
Gate2 to source cutoff current
I G2SS
—
Gate1 to source cutoff voltage
VG1S(off)
0.3
Gate2 to source cutoff voltage
VG2S(off)
0.5
Drain current
I D(op)
9
Forward transfer admittance
|yfs|
35
Input capacitance
c iss
2.6
Output capacitance
c oss
1.7
Reverse transfer capacitance
c rss
—
Power gain
PG1
28
Noise figure
Power gain
NF1
—
PG2
12
Noise figure
NF2
—
Typ
Max Unit
—
—
V
—
—
V
—
—
V
—
+100 nA
—
+100 nA
0.6
0.9
V
0.8
1.1
V
14
20
mA
42
50
mS
3.3
4.0
pF
2.1
2.5
pF
0.025 0.05 pF
32
—
dB
1.0
1.6
dB
16.5 —
dB
2.85 3.7
dB
Test Conditions
ID = 200µA
VG1S = VG2S = 0
IG1 = +10µA
VG2S = VDS = 0
IG2 = +10µA
VG1S = VDS = 0
VG1S = +5V
VG2S = VDS = 0
VG2S = +5V
VG1S = VDS = 0
VDS = 5V, VG2S = 4V
ID = 100µA
VDS = 5V, VG1S = 5V
ID = 100µA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 470kΩ
VDS = 5V, VG1 = 5V
VG2S =4V
RG = 470kΩ, f = 1kHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 470kΩ
f = 1MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 470kΩ
f = 200MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 470kΩ
f = 900MHz
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