BCR12PM-14LJ-B00 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

比赛名单

BCR12PM-14LJ-B00

700V - 12A - Triac Medium Power Use

Renesas Electronics 

BCR12PM-14LJ

Preliminary

Electrical Characteristics

Parameter

Symbo

Rated value

Unit

l

Min. Typ. Max.

Test conditions

Repetitive peak off-state current

IDRM

—

—

2.0

mA Tj = 150C, VDRM applied

On-state voltage

VTM

—

—

1.6

V

Tc = 25C, ITM = 20 A,

instantaneous measurement

Gate trigger voltageNote2



VFGT

—

—

1.5



VRGT

—

—

1.5

V

Tj = 25C, VD = 6 V, RL = 6 ,

V

RG = 330 

Gate trigger curentNote2

 VRGT

—



IFGT

—



IRGT

—

—

1.5

—

30

—

30

V

mA Tj = 25C, VD = 6 V, RL = 6 ,

mA RG = 330 



IRGT

—

—

30

mA

Gate non-trigger voltage

VGD

0.2

—

—

V

Tj = 125C, VD = 1/2 VDRM

Thermal resistance

0.1

—

—

V

Tj = 150C, VD = 1/2 VDRM

Rth (j-c)

—

—

4.0

C/W Junction to caseNote3

Critical-rate of rise of off-state

(dv/dt)c 10

—

—

V/s Tj = 125C

commutation voltageNote4

1

—

—

V/s Tj = 150C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.

4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

5. Make sure that your finished product containing this device meets your safe isolation requirements.

For safety, it's advisable that heatsink is electrically floating.

Test conditions

1. Junction temperature

Tj = 125/150C

2. Rate of decay of on-state commutating current

(di/dt)c = –6.0A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

Time

VD

R07DS0910EJ0100 Rev.1.00

Nov 14, 2012

Page 2 of 7

Share Link: